Analysis of the emission spectrum of Xe and Sn

Sasaki, Akira; Nishihara, Katsunobu*; Sunahara, Atsushi*; Nishikawa, Takeshi*; Koike, Fumihiro*; Kagawa, Takashi*; Tanuma, Hajime*

Proceedings of SPIE's International Symposium on Microlithography, Vol.6151, p.61513W_1 - 61513W_8, 2006/03

The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, with determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.